TSM4ND65CI
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- Mfr.Part #
- TSM4ND65CI
- Manufacturer
- Taiwan Semiconductor
- Package / Case
- TO-220-3 Full Pack, Isolated Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 4A ITO220
- Stock
- 1,845
- In Stock ：
- 1,845
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- Manufacturer :
- Taiwan Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 596pF @ 50V
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 650V
- Power Dissipation-Max :
- 41.6W Tc
- Rds On (Max) @ Id, Vgs :
- 2.6 Ω @ 1.2A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.8V @ 250μA
- Package / Case :
- TO-220-3 Full Pack, Isolated Tab
- Factory Lead Time :
- 28 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 16.8nC @ 10V
- Datasheets
- TSM4ND65CI
N-Channel Tube 2.6 Ω @ 1.2A, 10V ±30V 596pF @ 50V 16.8nC @ 10V 650V TO-220-3 Full Pack, Isolated Tab
TSM4ND65CI Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 596pF @ 50V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
TSM4ND65CI Features
a 650V drain to source voltage (Vdss)
TSM4ND65CI Applications
There are a lot of Taiwan Semiconductor Corporation
TSM4ND65CI applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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