TSM250N02DCQ RFG

Manufacturer :

Taiwan Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Standard

Transistor Element Material :

SILICON

Package / Case :

6-VDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 4.5V

Rds On (Max) @ Id, Vgs :

25m Ω @ 4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

775pF @ 10V

Power - Max :

620mW

Drain Current-Max (Abs) (ID) :

5.8A

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20V

Published :

2015

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Packaging :

Digi-Reel®

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N6

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.025Ohm

Feedback Cap-Max (Crss) :

50 pF

FET Type :

2 N-Channel (Dual)

Number of Elements :

2

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

800mV @ 250μA

Drain to Source Voltage (Vdss) :

20V