TPH7R506NH,L1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.6W Ta 45W Tc

Pulsed Drain Current-Max (IDM) :

66A

Continuous Drain Current (ID) :

22A

Package / Case :

8-PowerVDFN

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Reach Compliance Code :

Unknown

Series :

U-MOSVIII-H

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

55A

Number of Pins :

8

Terminal Position :

Dual

Case Connection :

DRAIN

RoHS Status :

RoHS Compliant

JESD-30 Code :

S-PDSO-F5

Published :

2012

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 11A, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 300μA

Input Capacitance (Ciss) (Max) @ Vds :

2320pF @ 30V

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Avalanche Energy Rating (Eas) :

132 mJ

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.019Ohm

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat