TPCC8A01-H(TE12LQM

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Max Operating Temperature :

150°C

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.9mOhm @ 10.5A, 10V

Series :

U-MOSV-H

Published :

2009

Min Operating Temperature :

-55°C

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Continuous Drain Current (ID) :

21A

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 10V

Operating Temperature :

150°C TJ

Input Capacitance :

1.9nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

700mW Ta 30W Tc

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Rise Time :

2.2ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerVDFN

Fall Time (Typ) :

3.4 ns

Rds On Max :

9.9 mΩ

Mounting Type :

Surface Mount