STW14NM50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

8 ns

Pin Count :

3

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Series :

MDmesh™

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Turn-Off Delay Time :

19 ns

Package / Case :

TO-247-3

Power Dissipation-Max :

175W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

14A

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Current Rating :

14A

FET Type :

N-Channel

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

56A

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

400 mJ

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Vgs (Max) :

±30V

Base Part Number :

STW14N

Power Dissipation :

175W

Voltage - Rated DC :

550V

Rise Time :

10ns

Number of Terminations :

3

Drain-source On Resistance-Max :

0.35Ohm

Qualification Status :

Not Qualified

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V