STV160NF03LT4
- Mfr.Part #
- STV160NF03LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 160A 10POWERSO
- Stock
- 47,561
- In Stock :
- 47,561
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 160A
- Number of Terminations :
- 10
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 170 ns
- Number of Pins :
- 12
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 15V
- Terminal Form :
- Gull wing
- Rise Time :
- 380ns
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Series :
- STripFET™
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-G10
- Rds On (Max) @ Id, Vgs :
- 2.8m Ω @ 80A, 10V
- Vgs (Max) :
- ±15V
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Drain-source On Resistance-Max :
- 0.0038Ohm
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Packaging :
- Cut Tape (CT)
- Power Dissipation-Max :
- 210W Tc
- Drain to Source Breakdown Voltage :
- 30V
- Turn-Off Delay Time :
- 80 ns
- Base Part Number :
- STV160
- Power Dissipation :
- 210W
- Pin Count :
- 10
- Current Rating :
- 160A
- Voltage - Rated DC :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 640A
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STV160NF03LT4

N-Channel Cut Tape (CT) 2.8m Ω @ 80A, 10V ±15V 4700pF @ 25V 140nC @ 10V PowerSO-10 Exposed Bottom Pad
STV160NF03LT4 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 160A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 80 ns.Peak drain current for this device is 640A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
STV160NF03LT4 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 640A.
STV160NF03LT4 Applications
There are a lot of STMicroelectronics
STV160NF03LT4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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