STP9NM60N
- Mfr.Part #
- STP9NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 6.5A TO220AB
- Stock
- 3,406
- In Stock :
- 3,406
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Drain Current-Max (Abs) (ID) :
- 9A
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Threshold Voltage :
- 3V
- Base Part Number :
- STP9N
- Width :
- 4.6mm
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 26.7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 452pF @ 50V
- Series :
- MDmesh™ II
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 70W Tc
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 745m Ω @ 3.25A, 10V
- Drain-source On Resistance-Max :
- 0.745Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 17.4nC @ 10V
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 52.5 ns
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Number of Terminations :
- 3
- Vgs (Max) :
- ±25V
- Transistor Application :
- SWITCHING
- Rise Time :
- 23ns
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 600V
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Length :
- 10.4mm
- Height :
- 15.75mm
- Power Dissipation :
- 70W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lifecycle Status :
- NRND (Last Updated: 7 months ago)
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 28 ns
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 26A
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 6.5A
- Number of Elements :
- 1
- Datasheets
- STP9NM60N

N-Channel Tube 745m Ω @ 3.25A, 10V ±25V 452pF @ 50V 17.4nC @ 10V 600V TO-220-3
STP9NM60N Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 452pF @ 50V.This device conducts a continuous drain current (ID) of 6.5A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 52.5 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 26A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 28 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP9NM60N Features
a continuous drain current (ID) of 6.5A
the turn-off delay time is 52.5 ns
based on its rated peak drain current 26A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STP9NM60N Applications
There are a lot of STMicroelectronics
STP9NM60N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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