STP8NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

790mOhm

Drain Current-Max (Abs) (ID) :

5A

Mount :

Through Hole

Number of Elements :

1

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

JESD-609 Code :

e3

Turn-Off Delay Time :

25 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5A

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Base Part Number :

STP8N

Lead Free :

Lead Free

Turn On Delay Time :

7 ns

Series :

MDmesh™ II

JEDEC-95 Code :

TO-220AB

Rise Time :

4.4ns

Vgs (Max) :

±25V

FET Type :

N-Channel

Height :

16.4mm

REACH SVHC :

No SVHC

Fall Time (Typ) :

8.8 ns

Factory Lead Time :

16 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Power Dissipation :

45W

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

Power Dissipation-Max :

45W Tc

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 50V

Package / Case :

TO-220-3

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

20A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Width :

4.6mm

Length :

10.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

500V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Terminal Position :

Single