STP6NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

110W

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3A, 10V

Threshold Voltage :

3.75V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Turn On Delay Time :

14 ns

Current Rating :

6A

Voltage - Rated DC :

600V

Drain to Source Breakdown Voltage :

600V

Lifecycle Status :

NRND (Last Updated: 8 months ago)

REACH SVHC :

No SVHC

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

6A

Fall Time (Typ) :

19 ns

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

6A

Height :

9.15mm

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Base Part Number :

STP6N

Width :

4.6mm

Packaging :

Tube

Turn-Off Delay Time :

47 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±30V

RoHS Status :

ROHS3 Compliant

Resistance :

1.2Ohm

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

24A

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Series :

SuperMESH™

Length :

10.4mm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 25V

Rise Time :

14ns

Case Connection :

Isolated

ECCN Code :

EAR99

Transistor Application :

SWITCHING