STP34NM60N
- Mfr.Part #
- STP34NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A TO220-3
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 16 Weeks
- Terminal Finish :
- Tin (Sn)
- Series :
- MDmesh™ II
- Pin Count :
- 3
- Mount :
- Through Hole
- Number of Elements :
- 1
- Package / Case :
- TO-220-3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Width :
- 4.6mm
- Resistance :
- 105mOhm
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 106 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 14.5A, 10V
- JESD-609 Code :
- e3
- Rise Time :
- 34ns
- Gate to Source Voltage (Vgs) :
- 25V
- Turn On Delay Time :
- 17 ns
- Drain to Source Breakdown Voltage :
- 600V
- FET Type :
- N-Channel
- Base Part Number :
- STP34N
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 29A
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 250W Tc
- Lead Free :
- Lead Free
- Length :
- 10.4mm
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 2722pF @ 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 210W
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 70 ns
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 15.75mm
- Datasheets
- STP34NM60N

N-Channel Tube 105m Ω @ 14.5A, 10V ±25V 2722pF @ 100V 80nC @ 10V TO-220-3
STP34NM60N Description
STP34NM60N N-channel MOSFET is based on an original, unique vertical structure. STP34NM60N MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STP34NM60N STMicroelectronics is utilized in Switching applications.
STP34NM60N Features
Low input capacitance
Low gate input resistance
Low gate charge
100% avalanche tested
STP34NM60N Applications
Notebook PC
Synchronous Buck
Notebook Vcore and Server
Notebook Battery Pack
Load Switch
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