STP21NM50N

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Mfr.Part #
STP21NM50N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 18A TO220AB
Stock
17,423
In Stock :
17,423

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Series :
MDmesh™ II
Operating Temperature :
150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
9.15mm
FET Type :
N-Channel
Mounting Type :
Through Hole
Threshold Voltage :
3V
Packaging :
Tube
Turn-Off Delay Time :
90 ns
ECCN Code :
EAR99
Voltage - Rated DC :
500V
Power Dissipation-Max :
140W Tc
Drain to Source Breakdown Voltage :
500V
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
JEDEC-95 Code :
TO-220AB
Power Dissipation :
140W
Pin Count :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
480 mJ
Width :
4.6mm
Base Part Number :
STP21N
Pulsed Drain Current-Max (IDM) :
72A
Turn On Delay Time :
22 ns
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin (Sn)
Length :
10.4mm
Current Rating :
18A
Vgs (Max) :
±25V
Rds On (Max) @ Id, Vgs :
190m Ω @ 9A, 10V
Number of Elements :
1
Lead Free :
Lead Free
Continuous Drain Current (ID) :
18A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Reach Compliance Code :
not_compliant
Fall Time (Typ) :
30 ns
Transistor Application :
SWITCHING
Rise Time :
18ns
Number of Terminations :
3
Element Configuration :
Single
REACH SVHC :
No SVHC
Package / Case :
TO-220-3
Gate to Source Voltage (Vgs) :
25V
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
Datasheets
STP21NM50N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP21NM50N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Base Part Number:STP21N, Number of Terminations:3, Package / Case:TO-220-3, STP21NM50N pinout, STP21NM50N datasheet PDF, STP21NM50N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP21NM50N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP21NM50N


N-Channel Tube 190m Ω @ 9A, 10V ±25V 1950pF @ 25V 65nC @ 10V TO-220-3

STP21NM50N Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The maximum input capacitance of this device is 1950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 18A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 22 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STP21NM50N Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 72A.
a threshold voltage of 3V


STP21NM50N Applications


There are a lot of STMicroelectronics
STP21NM50N applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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