STP13NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ II

Base Part Number :

STP13N

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

100W Tc

Mount :

Through Hole

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

48A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rise Time :

15ns

JESD-609 Code :

e3

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

200 mJ

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 50V

Pin Count :

3

Mounting Type :

Through Hole

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Power Dissipation :

100W

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

320m Ω @ 6A, 10V

Continuous Drain Current (ID) :

12A

Resistance :

320mOhm