STGWT28IH125DF

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Mfr.Part #
STGWT28IH125DF
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
IGBT 1250V 60A 375W TO-3P
Stock
42,995
In Stock :
42,995

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
720μJ (off)
Max Power Dissipation :
375W
Operating Temperature :
-55°C~175°C TJ
Package / Case :
TO-3P-3, SC-65-3
Input Type :
Standard
Gate Charge :
114nC
Collector Emitter Voltage (VCEO) :
1.25kV
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
1.25kV
Collector Emitter Saturation Voltage :
2.65V
Packaging :
Tube
ECCN Code :
EAR99
Test Condition :
600V, 25A, 10 Ω, 15V
Current - Collector Pulsed (Icm) :
120A
Factory Lead Time :
32 Weeks
Weight :
6.961991g
Base Part Number :
STGWT28
Max Collector Current :
60A
Power - Max :
375W
Td (on/off) @ 25°C :
-/128ns
Voltage - Collector Emitter Breakdown (Max) :
1250V
Element Configuration :
Single
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 25A
Mount :
Through Hole
IGBT Type :
Trench Field Stop
Datasheets
STGWT28IH125DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGWT28IH125DF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Base Part Number:STGWT28, Number of Pins:3, STGWT28IH125DF pinout, STGWT28IH125DF datasheet PDF, STGWT28IH125DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGWT28IH125DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGWT28IH125DF


STGWT28IH125DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGWT28IH125DF Description


The STGWT28IH125DF is a trench gate field-stop IGBT from STMicroelectronics, and it comes in TO-3P-3 and SC-65-3 packaging options. The performance of these IGBTs is maximized in both conduction and switching losses thanks to an enhanced patented trench gate field-stop structure. Co-packaged is a freewheeling diode with a minimal forward voltage drop. As a result, a product has been created that is optimized for any resonant and soft-switching application.



STGWT28IH125DF Features


  • Designed for soft commutation only

  • Maximum junction temperature: TJ = 175 °C

  • Minimized tail current

  • VCE(sat) = 2.0 V (Typ.) @ IC = 25 A

  • Tight parameters distribution

  • Safe paralleling

  • Low VF soft recovery co-packaged diode

  • Low thermal resistance

  • Lead-free package



STGWT28IH125DF Applications


  • Induction heating

  • Microwave oven

  • Resonant converters


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