STGB35N35LZ-1

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Mfr.Part #
STGB35N35LZ-1
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
IGBT 345V 40A 176W I2PAK
Stock
25,418
In Stock :
25,418

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Gate Charge :
49nC
Vce(on) (Max) @ Vge, Ic :
1.7V @ 4.5V, 15A
Collector Emitter Breakdown Voltage :
345V
Mount :
Through Hole
Gate-Emitter Voltage-Max :
12V
Number of Elements :
1
Additional Feature :
VOLTAGE CLAMPING
Number of Pins :
3
Pin Count :
3
Operating Temperature :
-55°C~175°C TJ
Current - Collector Pulsed (Icm) :
80A
Input Type :
Logic
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
380V
Case Connection :
COLLECTOR
Turn On Time :
7600 ns
Max Power Dissipation :
176W
Transistor Element Material :
SILICON
Power - Max :
176W
Number of Terminations :
3
ECCN Code :
EAR99
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Series :
PowerMESH™
Turn Off Time-Nom (toff) :
37000 ns
Element Configuration :
Single
Base Part Number :
STGB35
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
Td (on/off) @ 25°C :
1.1μs/26.5μs
Max Collector Current :
40A
Packaging :
Tube
Test Condition :
300V, 15A, 5V
Transistor Application :
POWER CONTROL
Datasheets
STGB35N35LZ-1
Introducing Transistors - IGBTs - Single STMicroelectronics STGB35N35LZ-1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Base Part Number:STGB35, Mounting Type:Through Hole, STGB35N35LZ-1 pinout, STGB35N35LZ-1 datasheet PDF, STGB35N35LZ-1 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGB35N35LZ-1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGB35N35LZ-1


STGB35N35LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGB35N35LZ-1                       Description

This application specific IGBT utilizes the most advanced PowerMESHtechnology.The built-in Zener diodes between gate-collector and gate- emitter provide overvoltage protection  capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

 

STGB35N35LZ-1                      Features

.Designed for automotive applications and

AEC-Q101 qualified Low threshold voltage · Lowon-voltage drop

High voltage clamping feature Logic level gate charge

· ESD gate-emitter protection

Gate and gate-emitter integrated resistors

 

STGB35N35LZ-1                      Application

· Automotive ignition


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