STFI20N65M5
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- Mfr.Part #
- STFI20N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Full Pack, I2Pak
- Datasheet
- Download
- Description
- MOSFET N CH 650V 18A I2PAKFP
- Stock
- 4,895
- In Stock ：
- 4,895
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 11.5 ns
- Continuous Drain Current (ID) :
- 18A
- Series :
- MDmesh™ V
- Drain to Source Breakdown Voltage :
- 650V
- Element Configuration :
- Single
- Base Part Number :
- STFI20N
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Mounting Type :
- Through Hole
- Rise Time :
- 7.5ns
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Width :
- 4.6mm
- Package / Case :
- TO-262-3 Full Pack, I2Pak
- Height :
- 10.85mm
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Length :
- 10.4mm
- Power Dissipation-Max :
- 130W Tc
- Fall Time (Typ) :
- 7.5 ns
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Packaging :
- Tube
- Turn On Delay Time :
- 43 ns
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1345pF @ 100V
- Operating Temperature :
- 150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STFI20N65M5
N-Channel Tube 190m Ω @ 9A, 10V ±25V 1345pF @ 100V 45nC @ 10V TO-262-3 Full Pack, I2Pak
STFI20N65M5 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1345pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 11.5 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 43 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STFI20N65M5 Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 11.5 ns
STFI20N65M5 Applications
There are a lot of STMicroelectronics
STFI20N65M5 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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