STF33N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

329.988449mg

Height :

16.4mm

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

35W Tc

Package / Case :

TO-220-3 Full Pack

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Channels :

1

Fall Time (Typ) :

9 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

26A

Number of Terminations :

3

Turn On Delay Time :

16 ns

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1781pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STF33N

Element Configuration :

Single

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

125m Ω @ 13A, 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Mounting Type :

Through Hole

Width :

4.6mm

Gate Charge (Qg) (Max) @ Vgs :

45.5nC @ 10V

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Length :

10.4mm

Factory Lead Time :

16 Weeks

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

109 ns

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Rise Time :

9.6ns

Series :

MDmesh™ II Plus