STF10NM50N
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- Mfr.Part #
- STF10NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 7A TO220FP
- Stock
- 8,826
- In Stock ：
- 8,826
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Drain to Source Breakdown Voltage :
- 500V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Element Configuration :
- Single
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 25W
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 28A
- Fall Time (Typ) :
- 12 ns
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 7A
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 50V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 25W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Rise Time :
- 4.4ns
- Rds On (Max) @ Id, Vgs :
- 630m Ω @ 3.5A, 10V
- Height :
- 16.4mm
- Width :
- 4.6mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Turn On Delay Time :
- 7.8 ns
- Series :
- MDmesh™ II
- Vgs (Max) :
- ±25V
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Resistance :
- 630mOhm
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 7.8 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Base Part Number :
- STF10N
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Threshold Voltage :
- 3V
- Drain Current-Max (Abs) (ID) :
- 7A
- Length :
- 10.4mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- STF10NM50N
N-Channel Tube 630m Ω @ 3.5A, 10V ±25V 450pF @ 50V 17nC @ 10V TO-220-3 Full Pack
STF10NM50N Overview
A device's maximal input capacitance is 450pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 7.8 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF10NM50N Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 7.8 ns
based on its rated peak drain current 28A.
a threshold voltage of 3V
STF10NM50N Applications
There are a lot of STMicroelectronics
STF10NM50N applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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