STB21NM50N

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Mfr.Part #
STB21NM50N
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 500V 18A D2PAK
Stock
64,364
In Stock :
64,364

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Termination :
SMD/SMT
Vgs (Max) :
±25V
Qualification Status :
Not Qualified
Operating Temperature :
150°C TJ
Avalanche Energy Rating (Eas) :
480 mJ
Peak Reflow Temperature (Cel) :
245
Drain to Source Breakdown Voltage :
500V
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Pin Count :
3
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
MDmesh™ II
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-G2
Rise Time :
18ns
Number of Elements :
1
Turn-Off Delay Time :
90 ns
Voltage - Rated DC :
500V
Gate to Source Voltage (Vgs) :
25V
Pulsed Drain Current-Max (IDM) :
72A
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Fall Time (Typ) :
30 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Resistance :
190mOhm
Dual Supply Voltage :
500V
Number of Terminations :
2
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Current Rating :
18A
Base Part Number :
STB21N
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Power Dissipation :
140W
Number of Pins :
3
Continuous Drain Current (ID) :
18A
Nominal Vgs :
3 V
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Power Dissipation-Max :
140W Tc
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Input Capacitance (Ciss) (Max) @ Vds :
1950pF @ 25V
Rds On (Max) @ Id, Vgs :
190m Ω @ 9A, 10V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
30
Lead Free :
Lead Free
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Datasheets
STB21NM50N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB21NM50N from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Base Part Number:STB21N, Number of Pins:3, STB21NM50N pinout, STB21NM50N datasheet PDF, STB21NM50N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB21NM50N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB21NM50N


N-Channel Tape & Reel (TR) 190m Ω @ 9A, 10V ±25V 1950pF @ 25V 65nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB21NM50N Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1950pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 90 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB21NM50N Features


the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 90 ns
based on its rated peak drain current 72A.


STB21NM50N Applications


There are a lot of STMicroelectronics
STB21NM50N applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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