STB16NM50N
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- Mfr.Part #
- STB16NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A D2PAK
- Stock
- 27,283
- In Stock ：
- 27,283
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 15A
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 16 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Vgs (Max) :
- ±25V
- Series :
- MDmesh™ II
- Power Dissipation :
- 125W
- Peak Reflow Temperature (Cel) :
- 245
- Pulsed Drain Current-Max (IDM) :
- 60A
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Turn On Delay Time :
- 20 ns
- Rise Time :
- 15ns
- Drain to Source Breakdown Voltage :
- 500V
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Base Part Number :
- STB16N
- Avalanche Energy Rating (Eas) :
- 470 mJ
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn-Off Delay Time :
- 60 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 50V
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.26Ohm
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 7.5A, 10V
- Power Dissipation-Max :
- 125W Tc
- ECCN Code :
- EAR99
- Datasheets
- STB16NM50N
N-Channel Tape & Reel (TR) 260m Ω @ 7.5A, 10V ±25V 1200pF @ 50V 38nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB16NM50N Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 470 mJ.A device's maximum input capacitance is 1200pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STB16NM50N Features
the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 60A.
STB16NM50N Applications
There are a lot of STMicroelectronics
STB16NM50N applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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