SSM6J505NU,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

30A

Number of Elements :

1

Power Dissipation-Max :

1.25W Ta

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 1mA

Terminal Form :

NO LEAD

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

12V

Number of Pins :

6

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

12m Ω @ 4A, 4.5V

Package / Case :

6-WDFN Exposed Pad

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Continuous Drain Current (ID) :

12A

Power Dissipation :

1.25W

Published :

2014

FET Type :

P-Channel

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

37.6nC @ 4.5V

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

6V

Reach Compliance Code :

Unknown

Vgs (Max) :

±6V

Series :

U-MOSVI

Number of Terminations :

6