SQJ486EP-T1_GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

120A

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

DS Breakdown Voltage-Min :

75V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

26m Ω @ 51A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

75V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Terminal Form :

Gull wing

Series :

Automotive, AEC-Q101, TrenchFET®

Case Connection :

DRAIN

Surface Mount :

yes

Package / Case :

8-PowerTDFN

Avalanche Energy Rating (Eas) :

9 mJ

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

30A

JESD-30 Code :

R-PSSO-G4

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Power Dissipation-Max :

56W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1386pF @ 15V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.026ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Position :

Single