SPP80N06S2-H5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Avalanche Energy Rating (Eas) :

700 mJ

Continuous Drain Current (ID) :

80A

Mount :

Through Hole

Reach Compliance Code :

Unknown

Voltage - Rated DC :

55V

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 25V

Terminal Position :

Single

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Terminal Finish :

MATTE TIN

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

320A

Packaging :

Tube

ECCN Code :

EAR99

Series :

OptiMOS™

JESD-30 Code :

R-PSFM-T3

Current Rating :

80A

FET Type :

N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 230μA

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 80A, 10V

Published :

2003

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0055Ohm

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON