SPP16N50C3HKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.28Ohm

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

460 mJ

Transistor Application :

SWITCHING

Series :

CoolMOS™

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

560V

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

48A

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

500V

Rds On (Max) @ Id, Vgs :

280m Ω @ 10A, 10V

Published :

2004

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Mounting Type :

Through Hole

Number of Terminations :

3

Continuous Drain Current (ID) :

16A

RoHS Status :

RoHS Compliant

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

160W Tc

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 25V

Vgs (Max) :

±20V

Power Dissipation :

160W

Rise Time :

8ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

50 ns

Case Connection :

DRAIN

Number of Elements :

1

Pin Count :

3

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

3.9V @ 675µA

Number of Pins :

3

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED