SPB80N06S2-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

6790pF @ 25V

Reach Compliance Code :

Unknown

Series :

OptiMOS™

Mount :

Surface Mount

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.0048Ohm

Terminal Position :

Single

Pin Count :

4

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Number of Elements :

1

Qualification Status :

Not Qualified

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

55V

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

300W Tc

Current Rating :

80A

Avalanche Energy Rating (Eas) :

810 mJ

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc