SP8M51TB1

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

*M51

Number of Pins :

8

Terminal Position :

Dual

FET Feature :

Standard

Drain-source On Resistance-Max :

0.19Ohm

Continuous Drain Current (ID) :

2.5A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

3A 2.5A

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

2

Operating Temperature :

150°C TJ

Number of Terminations :

8

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

2W

FET Type :

N and P-Channel

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Factory Lead Time :

26 Weeks

Lead Free :

Lead Free

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

12A

Transistor Application :

SWITCHING

Max Power Dissipation :

2W

Drain to Source Breakdown Voltage :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED