SKB15N60
- Mfr.Part #
- SKB15N60
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT, 31A, 600V, N-CHANNEL
- Stock
- 304
- In Stock :
- 304
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Factory Lead Time :
- 26 Weeks
- Turn Off Time-Nom (toff) :
- 315 ns
- Power - Max :
- 139W
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount :
- yes
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Reverse Recovery Time :
- 279ns
- Published :
- 2008
- Base Part Number :
- *KB15N60
- Additional Feature :
- LOW CONDUCTION LOSS
- Terminal Position :
- Single
- Gate Charge :
- 76nC
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 15A
- Test Condition :
- 400V, 15A, 21 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 62A
- Transistor Application :
- POWER CONTROL
- IGBT Type :
- NPT
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Switching Energy :
- 570µJ
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Reach Compliance Code :
- Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 54 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Current - Collector (Ic) (Max) :
- 31A
- RoHS Status :
- RoHS Compliant
- Case Connection :
- COLLECTOR
- Td (on/off) @ 25°C :
- 32ns/234ns
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Datasheets
- SKB15N60

SKB15N60ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
SKB15N60ATMA1 Description
SKB15N60ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes SKB15N60ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies SKB15N60ATMA1 has the common source configuration.
SKB15N60ATMA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
SKB15N60ATMA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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