SISS588DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

PowerPAK 1212-8S

Package / Case :

PowerPAK? 1212-8S

Number of Elements per Chip :

1

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

Series :

TrenchFET? Gen V

Rds On (Max) @ Id, Vgs :

8mOhm @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1380 pF @ 40 V

Mounting Type :

Surface Mount

Continuous Drain Current Id :

58.1A

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

8

Minimum Operating Temperature :

- 55 C

FET Feature :

-

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss) :

80 V

Mounting Style :

SMD/SMT

Transistor Polarity :

N-Channel

Supplier Device Package :

PowerPAK? 1212-8S

Power Dissipation :

56.8W

Current - Continuous Drain (Id) @ 25°C :

16.9A (Ta), 58.1A (Tc)

Qualification :

-

Channel Type :

N

Vgs (Max) :

±20V

Power Dissipation (Max) :

4.8W (Ta), 56.8W (Tc)

Package :

Digi-Reel?

Number of Channels :

1 Channel

Gate Charge (Qg) (Max) @ Vgs :

28.5 nC @ 10 V

Product Status :

Active