SISS30ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

Base Product Number :

SISS30

Product Status :

Active

Rise Time :

7 ns

Qualification :

-

Packaging :

MouseReel

Drain to Source Voltage (Vdss) :

80 V

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Channel Type :

N

Series :

TrenchFET? Gen IV

Power Dissipation :

57

Number of Channels :

1 Channel

FET Type :

N-Channel

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Package / Case :

PowerPAK? 1212-8S

Power Dissipation (Max) :

4.8W (Ta), 57W (Tc)

Pin Count :

8

Rds On (Max) @ Id, Vgs :

8.9mOhm @ 10A, 10V

FET Feature :

-

Brand :

Vishay / Siliconix

Mounting Style :

SMD/SMT

Continuous Drain Current Id :

54.7

Subcategory :

MOSFETs

Product Category :

MOSFET

Mounting Type :

Surface Mount

Package Type :

PowerPAK 1212-8S

Supplier Device Package :

PowerPAK? 1212-8S

Input Capacitance (Ciss) (Max) @ Vds :

1295 pF @ 40 V

Vgs (Max) :

±20V

Transistor Type :

1 N-Channel

RoHS :

Details

Number of Elements per Chip :

1

Manufacturer :

Vishay

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Package :

Digi-Reel?

Current - Continuous Drain (Id) @ 25°C :

15.9A (Ta), 54.7A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Minimum Operating Temperature :

- 55 C