SIS438DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Package / Case :

PowerPAK® 1212-8

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

3.05mm

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0095Ohm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.5W Ta 27.7W Tc

JESD-609 Code :

e3

Continuous Drain Current (ID) :

16A

Number of Elements :

1

Number of Terminations :

5

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Turn-Off Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 10A, 10V

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

32A

FET Type :

N-Channel

Published :

2014

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Pin Count :

8

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

S-XDSO-C5

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 10V

Terminal Position :

Dual

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Width :

3.05mm

Operating Mode :

ENHANCEMENT MODE

Height :

1.04mm

Radiation Hardening :

No

Fall Time (Typ) :

8 ns

Terminal Form :

C BEND

RoHS Status :

ROHS3 Compliant