SIR838DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

45 mJ

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Number of Pins :

8

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.033Ohm

Continuous Drain Current (ID) :

35A

Operating Mode :

ENHANCEMENT MODE

Package / Case :

PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 75V

Mounting Type :

Surface Mount

Turn On Delay Time :

16 ns

Terminal Form :

C BEND

JESD-30 Code :

R-XDSO-C5

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

150V

Published :

2015

Mount :

Surface Mount

Number of Terminations :

5

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

60A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Power Dissipation :

5.4W

Rds On (Max) @ Id, Vgs :

33m Ω @ 8.3A, 10V

Pbfree Code :

yes

Vgs (Max) :

±20V

Number of Elements :

1

Turn-Off Delay Time :

23 ns

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

5.4W Ta 96W Tc

Rise Time :

11ns

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Transistor Element Material :

SILICON