SIHP28N60EF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

14 Weeks

Fall Time (Typ) :

39 ns

Continuous Drain Current (ID) :

28A

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Mounting Type :

Through Hole

Number of Elements :

1

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

123m Ω @ 14A, 10V

Turn-Off Delay Time :

82 ns

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

75A

Element Configuration :

Single

Turn On Delay Time :

24 ns

Published :

2015

Number of Channels :

1

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Power Dissipation-Max :

250W Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2714pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Terminations :

3

Rise Time :

40ns

JEDEC-95 Code :

TO-220AB

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

28A Tc