SIHP23N60E-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

38 ns

Maximum Operating Temperature :

+ 150 C

Power Dissipation (Max) :

227W (Tc)

Supplier Device Package :

TO-220AB

Number of Channels :

1 Channel

Configuration :

Single

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

23A (Tc)

Mounting Type :

Through Hole

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

95 nC @ 10 V

Drain to Source Voltage (Vdss) :

600 V

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Series :

-

Rds On (Max) @ Id, Vgs :

158mOhm @ 12A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Subcategory :

MOSFETs

Mounting Style :

Through Hole

Brand :

Vishay / Siliconix

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Type :

1 N-Channel

Product Category :

MOSFET

FET Feature :

-

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

2418 pF @ 100 V

Packaging :

Tube

Manufacturer :

Vishay

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Vgs (Max) :

±30V

Drive Voltage (Max Rds On, Min Rds On) :

10V