SIHP21N80AEF-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Bulk

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

1511 pF @ 100 V

Series :

EF

Mounting Type :

Through Hole

Mounting Style :

Through Hole

Number of Elements per Chip :

1

Current - Continuous Drain (Id) @ 25°C :

16.3A (Tc)

Minimum Operating Temperature :

- 55 C

Qualification :

-

Number of Channels :

1 Channel

Power Dissipation :

179

Drive Voltage (Max Rds On, Min Rds On) :

10V

Channel Mode :

Enhancement

FET Type :

N-Channel

Power Dissipation (Max) :

179W (Tc)

Drain to Source Voltage (Vdss) :

800 V

Channel Type :

N

Continuous Drain Current Id :

16.3

Rds On (Max) @ Id, Vgs :

250mOhm @ 8.5A, 10V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

71 nC @ 10 V

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-220-3

Transistor Polarity :

N-Channel

FET Feature :

-

Package Type :

TO-220AB

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C