SI7998DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

60A

Mount :

Surface Mount

Package / Case :

PowerPAK® SO-8 Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

25A 30A

Power - Max :

22W 40W

Resistance :

9.3mOhm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

15A

Pin Count :

8

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

20V

Published :

2014

Number of Elements :

2

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

30A

Weight :

506.605978mg

Case Connection :

DRAIN

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Length :

4.9mm

JESD-609 Code :

e3

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pbfree Code :

yes

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Rise Time :

17ns

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Turn-Off Delay Time :

35 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-C6

Turn On Delay Time :

26 ns

Number of Channels :

2

Terminal Finish :

MATTE TIN

Max Power Dissipation :

40W

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V

Height :

1.04mm

Width :

5.89mm

Terminal Form :

C BEND