SI7997DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Number of Elements :

2

Resistance :

5.5mOhm

Case Connection :

DRAIN

Published :

2015

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

JESD-30 Code :

R-XDSO-C5

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Pin Count :

8

Package / Case :

PowerPAK® SO-8 Dual

Fall Time (Typ) :

40 ns

Weight :

506.605978mg

Drain Current-Max (Abs) (ID) :

60A

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 15V

Height :

1.12mm

Current - Continuous Drain (Id) @ 25°C :

60A

Turn-Off Delay Time :

115 ns

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

-2.2V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 20A, 10V

FET Feature :

Standard

Continuous Drain Current (ID) :

-20.8A

Mount :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

Peak Reflow Temperature (Cel) :

260

Base Part Number :

SI7997

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

46W

Pulsed Drain Current-Max (IDM) :

100A

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

-30V

Element Configuration :

Dual

Series :

TrenchFET®

Terminal Form :

C BEND

Reach Compliance Code :

Unknown

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

3.5W