SI7160DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-C5

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

16V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

5W Ta 27.7W Tc

Pulsed Drain Current-Max (IDM) :

60A

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2970pF @ 15V

Avalanche Energy Rating (Eas) :

20 mJ

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 15A, 10V

Fall Time (Typ) :

21 ns

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

29 ns

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

115ns

JESD-609 Code :

e3

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

PowerPAK® SO-8

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

43 ns

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Additional Feature :

ULTRA LOW RESISTANCE

Power Dissipation :

5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2013

Continuous Drain Current (ID) :

20A