SI4946BEY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 30V

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Number of Channels :

2

REACH SVHC :

No SVHC

Max Power Dissipation :

2.4W

Continuous Drain Current (ID) :

6.5A

Series :

TrenchFET®

Base Part Number :

SI4946

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

25 ns

Threshold Voltage :

2.4V

Number of Pins :

8

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

30A

Power Dissipation :

2.4W

Power - Max :

3.7W

Rds On (Max) @ Id, Vgs :

41m Ω @ 5.3A, 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

MATTE TIN

Turn On Delay Time :

10 ns

Pin Count :

8

Number of Elements :

2

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Weight :

506.605978mg

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Junction Temperature (Tj) :

175°C

Height :

1.75mm

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Length :

5mm

Mount :

Surface Mount

Resistance :

41mOhm

Published :

2007

Fall Time (Typ) :

10 ns

Element Configuration :

Dual

Radiation Hardening :

No

Rise Time :

12ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

5.3A

Transistor Element Material :

SILICON