SI4931DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

-8.9A

Power Dissipation :

1.1W

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.9A, 4.5V

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

8V

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Height :

1.55mm

Transistor Application :

SWITCHING

Number of Elements :

2

Base Part Number :

SI4931

Weight :

186.993455mg

Drain to Source Breakdown Voltage :

-12V

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 4.5V

Pbfree Code :

yes

Pin Count :

8

Rise Time :

46ns

Vgs(th) (Max) @ Id :

1V @ 350μA

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Terminations :

8

Fall Time (Typ) :

46 ns

Drain to Source Voltage (Vdss) :

12V

Width :

4mm

Drain Current-Max (Abs) (ID) :

6.7A

Current - Continuous Drain (Id) @ 25°C :

6.7A

Radiation Hardening :

No

FET Feature :

Logic Level Gate

Published :

2016

Turn On Delay Time :

25 ns

Mount :

Surface Mount

Factory Lead Time :

14 Weeks

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

230 ns

Max Power Dissipation :

1.1W

Length :

5mm