SI4888DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Rds On (Max) @ Id, Vgs :

7m Ω @ 16A, 10V

Radiation Hardening :

No

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Number of Elements :

1

Rise Time :

10ns

Power Dissipation-Max :

1.6W Ta

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 5V

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

44 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Number of Pins :

8

Continuous Drain Current (ID) :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1.6V @ 250μA

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

14 ns

Power Dissipation :

1.6W

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.007Ohm

Series :

TrenchFET®

Fall Time (Typ) :

20 ns

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Published :

2013

Peak Reflow Temperature (Cel) :

260