SI4569DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7.6A 7.9A

FET Feature :

Standard

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Series :

TrenchFET®

Threshold Voltage :

600mV

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

16V

Terminal Finish :

PURE MATTE TIN

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

Drain Current-Max (Abs) (ID) :

6A

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 10V

REACH SVHC :

No SVHC

Number of Terminations :

8

Fall Time (Typ) :

60 ns

Terminal Form :

Gull wing

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

2V @ 250μA

Rise Time :

105ns

Number of Pins :

8

Max Power Dissipation :

3.2W

Power - Max :

3.1W 3.2W

Element Configuration :

Dual

Base Part Number :

SI4569

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Pin Count :

8

Drain to Source Breakdown Voltage :

40V

Avalanche Energy Rating (Eas) :

5 mJ

Transistor Element Material :

SILICON

Published :

2016

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Turn-Off Delay Time :

51 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

7.9A

Peak Reflow Temperature (Cel) :

260