SI4565ADY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 20V

Drain to Source Breakdown Voltage :

40V

Drain to Source Resistance :

54mOhm

Length :

5mm

Min Operating Temperature :

-55°C

Rise Time :

90ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On Max :

39 mΩ

Power - Max :

3.1W

Series :

TrenchFET®

Weight :

506.605978mg

Current - Continuous Drain (Id) @ 25°C :

6.6A 5.6A

Number of Pins :

8

Supplier Device Package :

8-SO

Mount :

Surface Mount

Number of Channels :

2

Turn-Off Delay Time :

33 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

16V

Turn On Delay Time :

21 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2016

Fall Time (Typ) :

56 ns

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

39mOhm @ 5A, 10V

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Height :

1.55mm

FET Feature :

Standard

Continuous Drain Current (ID) :

5.6A

Width :

4mm

Base Part Number :

SI4565

Max Power Dissipation :

3.1W

Input Capacitance :

625pF

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Voltage (Vdss) :

40V