SI4563DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Power - Max :

3.25W

Terminal Finish :

PURE MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Height :

1.55mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.016Ohm

Turn-Off Delay Time :

75 ns

Published :

2016

DS Breakdown Voltage-Min :

40V

Gate to Source Voltage (Vgs) :

16V

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

8A

Continuous Drain Current (ID) :

8A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Rise Time :

93ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

FET Type :

N and P-Channel

Number of Terminations :

8

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Width :

4mm

Nominal Vgs :

2 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2W

ECCN Code :

EAR99

JESD-609 Code :

e3

Weight :

186.993455mg

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Turn On Delay Time :

33 ns

Mounting Type :

Surface Mount

Length :

5mm

Series :

TrenchFET®

Max Power Dissipation :

2W

Base Part Number :

SI4563

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 20V

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

16m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

40V

Fall Time (Typ) :

69 ns

FET Feature :

Standard

Number of Elements :

2

Mount :

Surface Mount

Number of Channels :

2