SI4483EDY-T1-E3

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Mfr.Part #
SI4483EDY-T1-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET P-CH 30V 10A 8SO
Stock
3,131
In Stock :
3,131

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
Unknown
Power Dissipation :
1.5W
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Mount :
Surface Mount
Turn On Delay Time :
10 μs
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±25V
Radiation Hardening :
No
Transistor Application :
SWITCHING
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Resistance :
8.5mOhm
Drain to Source Breakdown Voltage :
30V
Continuous Drain Current (ID) :
-14A
Terminal Position :
Dual
Terminal Form :
Gull wing
FET Type :
P-Channel
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
8
Rds On (Max) @ Id, Vgs :
8.5m Ω @ 14A, 10V
Fall Time (Typ) :
20 μs
Peak Reflow Temperature (Cel) :
260
Power Dissipation-Max :
1.5W Ta
Rise Time :
20μs
Series :
TrenchFET®
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Gate to Source Voltage (Vgs) :
25V
Current - Continuous Drain (Id) @ 25°C :
10A Ta
Element Configuration :
Single
Published :
2011
ECCN Code :
EAR99
Terminal Finish :
MATTE TIN
Number of Elements :
1
Threshold Voltage :
3V
Packaging :
Tape and Reel (TR)
Number of Pins :
8
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
42 μs
Datasheets
SI4483EDY-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI4483EDY-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Operating Temperature:-55°C~150°C TJ, SI4483EDY-T1-E3 pinout, SI4483EDY-T1-E3 datasheet PDF, SI4483EDY-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI4483EDY-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI4483EDY-T1-E3


P-Channel Tape & Reel (TR) 8.5m Ω @ 14A, 10V ±25V 8-SOIC (0.154, 3.90mm Width)

SI4483EDY-T1-E3 Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -14A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [42 μs] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 μs indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

SI4483EDY-T1-E3 Features


a continuous drain current (ID) of -14A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 42 μs
a threshold voltage of 3V


SI4483EDY-T1-E3 Applications


There are a lot of Vishay Siliconix
SI4483EDY-T1-E3 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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