SI4483EDY-T1-E3
- Mfr.Part #
- SI4483EDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 10A 8SO
- Stock
- 3,131
- In Stock :
- 3,131
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- Unknown
- Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mount :
- Surface Mount
- Turn On Delay Time :
- 10 μs
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±25V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Resistance :
- 8.5mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- -14A
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 14A, 10V
- Fall Time (Typ) :
- 20 μs
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 1.5W Ta
- Rise Time :
- 20μs
- Series :
- TrenchFET®
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 25V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Element Configuration :
- Single
- Published :
- 2011
- ECCN Code :
- EAR99
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Threshold Voltage :
- 3V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 42 μs
- Datasheets
- SI4483EDY-T1-E3

P-Channel Tape & Reel (TR) 8.5m Ω @ 14A, 10V ±25V 8-SOIC (0.154, 3.90mm Width)
SI4483EDY-T1-E3 Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -14A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [42 μs] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 μs indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
SI4483EDY-T1-E3 Features
a continuous drain current (ID) of -14A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 42 μs
a threshold voltage of 3V
SI4483EDY-T1-E3 Applications
There are a lot of Vishay Siliconix
SI4483EDY-T1-E3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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