SI4410DYTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Terminal Position :

Dual

Resistance :

13.5mOhm

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Height :

1.4986mm

Nominal Vgs :

1 V

REACH SVHC :

No SVHC

Turn On Delay Time :

11 ns

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Rise Time :

7.7ns

Power Dissipation-Max :

2.5W Ta

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Avalanche Energy Rating (Eas) :

400 mJ

Termination :

SMD/SMT

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

1585pF @ 15V

Dual Supply Voltage :

30V

ECCN Code :

EAR99

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Current Rating :

10A

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

44 ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Continuous Drain Current (ID) :

10A

Element Configuration :

Single

Lead Free :

Contains Lead, Lead Free

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Turn-Off Delay Time :

38 ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Series :

HEXFET®

Threshold Voltage :

1V

Pulsed Drain Current-Max (IDM) :

50A

Mounting Type :

Surface Mount

Width :

3.9878mm

Transistor Element Material :

SILICON

Published :

2001

Terminal Form :

Gull wing

Length :

4.9784mm

JESD-609 Code :

e3