SI4396DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Pure Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

40A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Weight :

186.993455mg

Avalanche Energy Rating (Eas) :

20 mJ

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Number of Channels :

1

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1675pF @ 15V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation-Max :

3.1W Ta 5.4W Tc

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Continuous Drain Current (ID) :

12.3A

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Pin Count :

8

Pbfree Code :

yes

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)