SI3993DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Feature :

Logic Level Gate

Pin Count :

6

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

1.8A

Power Dissipation :

830mW

Number of Terminations :

6

Drain-source On Resistance-Max :

0.133Ohm

Operating Temperature :

-55°C~150°C TJ

Weight :

19.986414mg

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

1.8A

FET Type :

2 P-Channel (Dual)

Transistor Element Material :

SILICON

Number of Channels :

2

Max Power Dissipation :

830mW

Nominal Vgs :

-3 V

Turn-Off Delay Time :

17 ns

REACH SVHC :

Unknown

Turn On Delay Time :

10 ns

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

12 ns

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

PURE MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

16ns

Base Part Number :

SI3993

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

133m Ω @ 2.2A, 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

-2.2A

Element Configuration :

Dual

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Published :

2013

Threshold Voltage :

-3V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

-30V