SI3455ADV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Drain to Source Resistance :

100MOhm

Continuous Drain Current (ID) :

-3.5A

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30V

Height :

1mm

Resistance :

100MOhm

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Power Dissipation :

1.14W

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

1.14W Ta

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Published :

2016

Rds On (Max) @ Id, Vgs :

100mOhm @ 3.5A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Width :

1.65mm

REACH SVHC :

Unknown

Length :

3.05mm

Turn-Off Delay Time :

20 ns

Element Configuration :

Single

Turn On Delay Time :

10 ns

Nominal Vgs :

-1 V

Current - Continuous Drain (Id) @ 25°C :

2.7A Ta

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Fall Time (Typ) :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Supplier Device Package :

6-TSOP

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-1V

Number of Pins :

6

Series :

TrenchFET®

Rds On Max :

100 mΩ