SI3434DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

40 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pin Count :

6

Rise Time :

45ns

Lead Free :

Lead Free

Number of Elements :

1

Threshold Voltage :

600mV

Mounting Type :

Surface Mount

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.14W

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistance :

34mOhm

Continuous Drain Current (ID) :

4.6A

Nominal Vgs :

600 mV

Power Dissipation-Max :

1.14W Ta

Turn On Delay Time :

21 ns

Vgs(th) (Max) @ Id :

600mV @ 1mA (Min)

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

No SVHC

Element Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

34m Ω @ 6.1A, 4.5V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Published :

2011

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

30 ns

Vgs (Max) :

±12V

Number of Pins :

6

Series :

TrenchFET®

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Terminal Position :

Dual