SI2302DS,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Operating Temperature :

-65°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

650mV @ 1mA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Pin Count :

3

Vgs (Max) :

±8V

Terminal Finish :

Tin (Sn)

Number of Elements :

1

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

830mW Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Input Capacitance (Ciss) (Max) @ Vds :

230pF @ 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Surface Mount :

yes

Terminal Form :

Gull wing

FET Type :

N-Channel

Series :

TrenchMOS™

Drain Current-Max (Abs) (ID) :

2.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Transistor Element Material :

SILICON

Published :

1997

Reach Compliance Code :

Unknown

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.6A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.085Ohm

JEDEC-95 Code :

TO-236AB

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc