SI1411DH-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

150V

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Continuous Drain Current (ID) :

420mA

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Series :

TrenchFET®

FET Type :

P-Channel

Pin Count :

6

Drain Current-Max (Abs) (ID) :

0.42A

JESD-609 Code :

e3

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

1

DS Breakdown Voltage-Min :

150V

Pbfree Code :

yes

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G6

Published :

2010

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

2.7Ohm

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 500mA, 10V

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

420mA Ta

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

6.3nC @ 10V